| PART |
Description |
Maker |
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BSC009NE2LS |
Optimized for e-fuse and ORing application
OptiMOSTM Power-MOSFET
|
List of Unclassifed Manufacturers
Infineon Technologies A...
|
| MAX5079EUD MAX5079 |
From old datasheet system
ORing MOSFET Controller with Ultra-Fast 200ns Turn-Off
|
MAXIM[Maxim Integrated Products]
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| APT50M60JVR |
Volts:500V RDS(ON)0.06Ohms ID(cont):63Amps|MOSFETs 电压00V电压的RDS（ON.06Ohms身份证（续）63安培| MOSFET
|
Yageo, Corp.
|
| MAX8535AEUA-T MAX8535EUAT |
ORing MOSFET Controllers with Fastest Fault Isolation for Redundant Power Supplies 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
|
Maxim Integrated Products, Inc.
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
